| 摘要 |
<p>A method of fabricating an integrated device on a chip comprising first and second features (A, B), the second feature, B, having greater dimension and/or being of coarser design than the first feature A. The method involves the steps of: depositing a resist onto the chip, the resist being of a type that forms a thinner deposit on larger or coarser features than on smaller or finer features; treating the resist in dependence upon the thickness thereof to render it susceptible to a subsequent etching step, the thicker areas of resist being treated for a longer period of time or by a more intense treatment than the thinner areas of resist; and etching the treated areas of the resist to form a mask for use in the fabrication of said first and second features (A, B), on the chip.</p> |
