| 摘要 |
PURPOSE: A semiconductor structure is provided to be capable of enduring an annealing at a high temperature without damaging conductivity and perfection. CONSTITUTION: The semiconductor structure includes a substrate selected among substrates of a group of silicon, polysilicon, silicon dioxide, and silicon germanium, and an electrode located on the substrate. The electrode contains a layer of a composition of Ir-M-O. Where, M is a metal selected from one among metals of a group of Ta, Ti, Nb, Al, Hf, Zr, and V. The semiconductor structure is constructed and arranged so as to endure the annealing at a temperature of 600°C or more without damaging conductivity and perfection.
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