发明名称 Sense amplifier integrated circuit for high speed semiconductor memory, has current amplifier with input stage and output stage which are responsive to control signal that reduces gain of current amplifier
摘要 <p>A current amplifier (110) has input and output stages electrically connected to the pair of differential input signal lines (IN,INB) and output signal lines (CSAO,CSAOB) respectively. The input stage and/or output stage are responsive to a control signal (XCON) that reduces a gain of the current amplifier, when the control signal is asserted. An independent claim is also included for output data amplifier of semiconductor device.</p>
申请公布号 DE10136503(A1) 申请公布日期 2002.05.29
申请号 DE2001136503 申请日期 2001.07.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, JONG-HYOUNG;KANG, KYOUNG-WOO;HYUN, DONG-HO
分类号 G11C17/00;G11C7/06;G11C11/407;G11C11/409;G11C11/413;G11C11/419;G11C16/06;G11C17/18;H03K5/08;(IPC1-7):G11C7/06 主分类号 G11C17/00
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