发明名称 |
Sense amplifier integrated circuit for high speed semiconductor memory, has current amplifier with input stage and output stage which are responsive to control signal that reduces gain of current amplifier |
摘要 |
<p>A current amplifier (110) has input and output stages electrically connected to the pair of differential input signal lines (IN,INB) and output signal lines (CSAO,CSAOB) respectively. The input stage and/or output stage are responsive to a control signal (XCON) that reduces a gain of the current amplifier, when the control signal is asserted. An independent claim is also included for output data amplifier of semiconductor device.</p> |
申请公布号 |
DE10136503(A1) |
申请公布日期 |
2002.05.29 |
申请号 |
DE2001136503 |
申请日期 |
2001.07.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, JONG-HYOUNG;KANG, KYOUNG-WOO;HYUN, DONG-HO |
分类号 |
G11C17/00;G11C7/06;G11C11/407;G11C11/409;G11C11/413;G11C11/419;G11C16/06;G11C17/18;H03K5/08;(IPC1-7):G11C7/06 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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