发明名称 |
ACTIVE MATRIX SUBSTRATE AND THIN FILM TRANSISTOR, AND METHOD OF ITS MANUFACTURE |
摘要 |
<p>In forming a thin film transistor (620) whose OFF-current characteristics are improved, the source and drain regions (602 and 603) of low impurity concentration are formed. In this process, all the ions (indicated by arrow Ion-1) of around 80 keV energy produced from a mixed gas (doping gas) containing 5% PH3 and the rest of H2 gas, are implanted into a polycrystalline silicon film (604) so that the concentration of impurities in a range of 3 x 10<1><3>/cm<2> to 1 x 10<1><4>/cm<2> in terms of P<+> ions. Then all the ions (indicated by arrow Ion-2) of about 20 keV energy produced from a doping gas of pure hydrogen are implanted into a low concentration region (604a) so that the concentration of impurities is in a range of 1 x 10<1><4>/cm<2> to 1 x 10<1><5>/cm<2> in terms of H<+> ions. After that, the impurities are activated by thermally treating the low concentration region (604a) in a nitrogen atmosphere at a temperature of approximately 300 DEG C for approximately one hour. <IMAGE></p> |
申请公布号 |
EP0635890(B1) |
申请公布日期 |
2002.05.29 |
申请号 |
EP19940906359 |
申请日期 |
1994.02.09 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YUDASAKA, ICHIO;MATSUO, MINORU;TAKENAKA, SATOSHI |
分类号 |
G02F1/1362;H01L21/223;H01L21/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/772;H01L21/321;G02F1/136 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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