Production of a metal line comprises completely covering a substrate with an insulating layer, forming a sacrificial layer, selectively etching to expose the conducting region, forming a metal layer and finely grinding a metal structure

摘要

Production of a metal line comprises forming a semiconductor substrate (100) having a conducting region (120); completely covering the substrate with an insulating layer (140); forming a sacrificial layer (150) on the insulating layer; selectively etching the layers to form a layer structure exposing the conducting region; forming a metal layer to fill the layer structure; and finely grinding in a chemical-mechanical manner to remove the metal layer above the sacrificial layer leaving a metal structure which acts as the metal line. Preferred Features: The insulating layer is made from silicon oxide formed by CVD using TEOS as the main reaction gas. The sacrificial layer is made from silicon nitride formed by CVD. The metal layer is made from tungsten.