发明名称 |
Cold cathode forming process and electron emission element, and applied device of the same |
摘要 |
<p>The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure. <IMAGE></p> |
申请公布号 |
EP1209716(A2) |
申请公布日期 |
2002.05.29 |
申请号 |
EP20010127581 |
申请日期 |
2001.11.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA, YUKA;YOSHIDA, TAKEHITO;SUZUKI, NOBUYASU;MAKINO, TOSHIHARU;HORI, YOSHIKAZU |
分类号 |
H01J1/304;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):H01J9/02 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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