Production of spacer oxide layers on the side walls of field effect transistors comprises forming control electrodes made from polysilicon on a substrate, implanting ions into the side walls of the electrodes

摘要

Production of spacer oxide layers on the side walls of field effect transistors comprises forming control electrodes (5c, 5d, 5e) made from polysilicon on a semiconductor substrate (1), each electrode separated from the substrate by a gate oxide (4c, 4d, 4e); implanting ions into the side walls of the electrodes to increase the oxidation rate of the polysilicon; and thermally oxidizing the implanted electrodes at a defined temperature to form spacer oxide layers. Preferred Features: The ions are implanted into the electrodes at an angle ( alpha ) with respect to the side walls. The electrodes have a defined height (H) and distance (A) from each other. The implanting ions are fluorine and/or argon.