发明名称 |
Method of depositing organosilicate layers |
摘要 |
<p>A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by reacting a gas mixture comprising a phenyl-based alkoxysilane compound. The gas mixture may be reacted by applying an electric field thereto. The gas mixture may optionally include an organosilane compound as well as an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is used as a hardmask. In yet another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.</p> |
申请公布号 |
EP1209728(A2) |
申请公布日期 |
2002.05.29 |
申请号 |
EP20010124607 |
申请日期 |
2001.10.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YIEH, ELLI;GAILLARD, FREDERIC;XIA, LI-QUN |
分类号 |
H01L21/20;C23C16/30;C23C16/40;H01L21/027;H01L21/308;H01L21/311;H01L21/312;H01L21/316;H01L21/3213;H01L21/768;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|