| 摘要 |
Silica films (3,5) having the same thermal expansion coefficients are applied to the front and back surfaces of a silicon wafer. The opposing films tend to cancel out any stress induced warping of the wafer during annealing caused by a mismatch of the thermal expansion coefficients of the wafer and the thin film. A temporary film 2 may be formed on the front wafer surface before forming the stress cancelling silica film on the back surface, and is removed before forming the farther films 4 and 5 on the front surface. The temporary film protects the front surface of the wafer during processing prior to forming the device layers on the front surface of the wafer. The invention may be applied to the manufacture of optical multiplexers, photonics devices, MEMS devices, multi-chip modules, and semiconductor devices.
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