发明名称 |
Npn-heterojunction bipolar transistor including an antimonide base formed on semi-insulating indium phosphide substrate |
摘要 |
<p>A heterojunction bipolar transistor (HBT) (10, 30) includes an indium-gallium-arsenide (InGaAs), indium-phosphide (InP) or aluminum-indium-arsenide (AlInAs) collector layer (14) formed over an indium-phosphide (InP) substrate (12). A base layer (16, 32) including gallium (Ga), arsenic (As) and antimony (Sb) is formed over the collector layer (14), and an AlInAs or InP emittor layer (18) is formed over the base layer (16, 32). The base layer may be ternary gallium-arsenide-antimonide (GaAsSb) doped with beryllium (Be) (16) (Fig. 1). <IMAGE></p> |
申请公布号 |
EP1209750(A2) |
申请公布日期 |
2002.05.29 |
申请号 |
EP20020002355 |
申请日期 |
1993.05.27 |
申请人 |
HUGHES ELECTRONICS CORPORATION |
发明人 |
STANCHINA, WILLIAM E.;HASENBERG, THOMAS |
分类号 |
H01L21/331;H01L29/15;H01L29/205;H01L29/73;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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