Production of a capacitor arrangement used for an FeRAM storage device comprises filling exposed intermediate regions of the substrate with an electrically insulating intermediate layer up to the level of an capacitor device

摘要

Production of a capacitor arrangement comprises filling exposed intermediate regions (24) of the surface (21) of the substrate (20) with an electrically insulating intermediate layer (30) up to the level of an upper layer (18) of a capacitor device (10). Preferred Features: A contact layer (50) is applied and/or structured on the intermediate layer to provide an electrical contact with the upper layer of the capacitor device.