发明名称 |
CHEMICAL AMPLIFICATION RESIST COMPOSITION |
摘要 |
<p>The present invention discloses a chemically amplified resist composition comprising: a resin which becomes soluble in an aqueous alkali solution in the presence of an acid, a photo acid generator, and an amine derivative which shows, in water of 25 DEG C, such a basicity as to form a conjugate acid and has a medium polarity. The amine derivative acts as a quencher. Therefore, the chemically amplified resist composition of the present invention enables formation of a very precise and fine resist pattern and can be suitably used particularly in a lithography using an ArF excimer laser beam.</p> |
申请公布号 |
EP1209525(A1) |
申请公布日期 |
2002.05.29 |
申请号 |
EP20000942481 |
申请日期 |
2000.07.11 |
申请人 |
MITSUBISHI RAYON CO., LTD. |
发明人 |
FUJIWARA, TADAYUKI;WAKISAKA, YUKIYA;TOOYAMA, MASAYUKI |
分类号 |
G03F7/004;G03F7/039;(IPC1-7):G03F7/039;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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