发明名称 CHEMICAL AMPLIFICATION RESIST COMPOSITION
摘要 <p>The present invention discloses a chemically amplified resist composition comprising: a resin which becomes soluble in an aqueous alkali solution in the presence of an acid, a photo acid generator, and an amine derivative which shows, in water of 25 DEG C, such a basicity as to form a conjugate acid and has a medium polarity. The amine derivative acts as a quencher. Therefore, the chemically amplified resist composition of the present invention enables formation of a very precise and fine resist pattern and can be suitably used particularly in a lithography using an ArF excimer laser beam.</p>
申请公布号 EP1209525(A1) 申请公布日期 2002.05.29
申请号 EP20000942481 申请日期 2000.07.11
申请人 MITSUBISHI RAYON CO., LTD. 发明人 FUJIWARA, TADAYUKI;WAKISAKA, YUKIYA;TOOYAMA, MASAYUKI
分类号 G03F7/004;G03F7/039;(IPC1-7):G03F7/039;H01L21/027 主分类号 G03F7/004
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