Method for determining the relative surface area of a serif of a characteristic of a photo-mask or pattern for producing integrated circuits resulting in improved quality control of integrated circuit photo-mask production

摘要

Method has the following steps: identification of a characteristic of a serif (108, 110), determination of the intensity profile of a region of interest surrounding the serif, summing of the difference between data points on the profile and a constant value to calculate a flowing value and calculation of the serif relative surface from the flowing value, with the relative surface value used to evaluate the quality of the photo-mask. An Independent claim is made for a method for determining the asymmetry of conductor serifs. The invention also relates to corresponding photo-masks and semiconductor components produced with the masks.