| 摘要 |
PURPOSE: To provide a power conversion device capable of contracting the circuit scale as the whole device. CONSTITUTION: This power conversion device 1 independently comprises a semiconductor device 2 and a semiconductor device 3. The semiconductor device 2 comprises a power converting element such as IGBT 19 or the like, Zener diodes 20 and 21, a waveform shaping circuit 30, a heating interrupting circuit 31 and a protective element 14, which are formed on the same chip using a p-type silicon substrate. The semiconductor device 3 comprises a Schmidt circuit 9, a power source circuit 10, a high voltage detecting circuit 11, a protective element 13, a logic gate 16 and an output circuit formed by a pnp transistor 17, which are formed on the same chip using a p-type silicon substrate. |
