| 摘要 |
PURPOSE: A semiconductor memory device and a method of manufacturing the particular semiconductor memory device are provided to increase the degree of integration without decreasing the capacitance of the capacitor included in a memory cell. CONSTITUTION: The semiconductor memory device comprises a semiconductor substrate(1), an interlayer insulating film(4) formed on the semiconductor substrate, a first electrode formed on the interlayer insulating film, a first ferroelectric film(10) formed on the first electrode, a second electrode formed on the first ferroelectric film, a second ferroelectric film(12) formed on the second electrode, and a third electrode formed on the second ferroelectric film.
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