SEMICONDUCTOR DEVICE HAVING BIT-LINE LANDING PAD AND NO BOUNDARY CONTACT ON BIT-LINE STUD PROVIDED WITH ETCHING STOP LAYER, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a circuit and method wherein the precision of its etching depth is secured by forming its etching stop layer having a different etching selectivity from its underlay insulation film, and its etching stop layer so exists only in the peripheral region of its elements as to make possible the degassings of its constituent elements which occur during the processes following to constituting the elements, and as to make possible the following alloy processes for repairing properly the defects of its underlay contacts and its transistors. SOLUTION: In the manufacturing method of the semiconductor device, an etching stop layer is provided selectively between the layers of a multilayer circuit in consideration of degassing impurities during its continuous manufacturing processes. The etching stop layer is so formed on an underlay stud as to serve as an alignment target during forming an upper layer stud to be formed in the upper layer which is coupled to the underlay stud. By such a method, the multilayer circuits, e.g. memory elements can be manufactured in a comparably dense layout.