| 摘要 |
PROBLEM TO BE SOLVED: To offer a hybrid semiconductor device realizing a good high-frequency characteristic and a low cost. SOLUTION: This hybrid semiconductor device 1 is provided with a ceramic substrate 10 comprising a cavity, an active element 50 mounted on the bottom plane of the cavity, and a passive element 60 mounted on the upper plane of the ceramic substrate 10. The ceramic substrate 10 is provided with a wiring layer 17 formed on the upper plane of the substrate 10, a thermal via 14 formed by burying a heat conductive material in a via hole which is formed to penetrate the substrate from the bottom plane of the cavity to the bottom plane of the substrate 10, and a metal layer 16 connecting a wiring layer 18 formed on the side and bottom planes of the cavity with the thermal via 14. The active element 50 is mounted on the ceramic substrate 10 in the place of the bottom plane of the cavity, and a grounding electrode pad 56 is connected with the wiring layer 17 by a bonding wire 62. A gap between the side plane of the active element 50 and the side wall of the cavity is filled with a conductive material 22. |
