| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a temperature-compensating capacitor, in which the capacity temperature coefficient has negative sign and an absolute value of the order of 100 ppm/K. SOLUTION: A temperature-compensating capacitor 1 of the present invention includes a silicon hydride oxidation film composed of a silicon atom, an oxidation atom, and a hydrogen atom between a lower electrode layer 3 and an upper electrode layer 5, and a dielectric thin film 4, having a negative capacity temperature coefficient, is interposed therebetween. The silicon oxidation hydride film has an Si-OH bond, and the ratio of hydrogen atoms contained in the film is set at 0.5 to 7 atomic percent.</p> |
