| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a metal oxide film by sputtering, which can enhance characteristics uniformity of the metal oxide film formed on a wafer. SOLUTION: A wafer 1 is loaded on an anode stage 4 which is faced on a sputtering target, and a metal oxide film such as vanadium oxide (VOx) film is formed on the wafer 1 by sputtering. Prior to these steps, regions where metal faces are exposed are formed on the anode stage 4 or on the wafer 1 by a process of forming a metal film 2a on an outer periphery of the wafer 1 and a lattice-shaped metal film 2b on the inside of the wafer 1. By grounding the metal regions, charging during the VOx film formation is prevented to suppress self-bias potential, and uniformity of the resistance value of the VOx film is enhanced.
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