| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical integrated circuit and the manufacturing method, capable of integrating a light-receiving device and a device for amplification, without having to carry out a complicated semiconductor manufacturing process. SOLUTION: The light-receiving device 10 for converting optical signals to electrical signals and the device 30 for the amplification for amplifying the electrical signals converted in the light-receiving device 10, are arranged on an InP substrate 1 and both devices 10 and 30 are provided with the same semiconductor film structure. The light-receiving device 10 and the device 30 for the amplification are provided with electron supply layers 13 and 33 formed on the substrate 1 and channel layers 12 and 32, where the electrons supplied from the electron supply layers 13 and 33 move. For a high electron mobility transistor, the electron supply layers 13 and 33 are composed of In0.52Al0.48As, and the channel layers 12 and 32 are composed of In0.80Ga0.20As. The gate recess structure of the HEMT 10 for light reception is turned into a two-stage recess and the gate recess structure of the HEMT 30 for the amplification is turned into a single-stage recess.
|
