| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a high-quality thin film on a substrate by continuously producing a homegeneous plasma under a pressure being very close to the atmospheric pressure and then treating the substrate with the plasma, in the manufacture of a metal thin film or metal silicide film in a semiconductor device manufacturing process. SOLUTION: In forming the metal thin film or metal silicide thin film in the semiconductor device by the plasma CVD method, a solid-state dielectric is provided on at least one opposite face of a pair of opposite electrodes under a pressure being very close to the atmospheric pressure, and a processing gas is introduced between the opposite electrodes to apply a pulsatory electric field to the electrodes to generate a plasma. The plasma is brought into contact with the substrate. A part near the contact section between the plasma and the substrate is kept in an atmosphere of at least one kind of element selected among argon, helium, neon, and xenon.
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