| 摘要 |
PROBLEM TO BE SOLVED: To facilitate mode switching between a fast page mode and an extended data-out mode in a DRAM. SOLUTION: A semiconductor storage device is provided with a 1st fuse F1 which is connected with the drain electrode of a P-channel MOS transistor T1 whose source electrode is connected with power supply voltage and gate electrode is grounded and which is employed to fix the potential of the node N of the mode switching circuit 1 at a high level, and a 2nd fuse 2 which is connected with the drain electrode of an N-channel MOS transistor T2 whose source electrode is grounded and gate electrode is connected with the power supply voltage and which is employed to fix the potential of the node N of the mode switching circuit 1 at a low level. It is made possible to switch between the fast page mode and the extended data-out mode by cutting off either of the fuses.
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