发明名称 METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT AND METHOD OF FORMIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistive effect element which causes little performance fluctuation, is highly reliable, and is excellent in productivity. SOLUTION: The method of manufacturing the magnetoresistive effect element includes a step of preparing a substrate having a coefficient of thermal conductivity of 5-150 Wm-1K-1, a substrate cooling step of cooling the substrate in a vacuum cooling chamber after the substrate is moved to the cooling chamber, and a laminated film forming step of fixing the cooled substrate to a substrate holder and, at the same time, forming a laminated magnetoresistive effect film on the substrate while the substrate is rotated in a vacuum film forming chamber after the substrate is moved to the film forming chamber.
申请公布号 JP2002151760(A) 申请公布日期 2002.05.24
申请号 JP20000341467 申请日期 2000.11.09
申请人 TDK CORP 发明人 SHIMAZAWA KOJI;TSUCHIYA YOSHIHIRO
分类号 C23C14/34;C23C14/54;C23C14/56;G11B5/39;H01F10/26;H01F41/18;H01F41/30;H01L21/203;H01L43/08;H01L43/12;(IPC1-7):H01L43/12 主分类号 C23C14/34
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