| 摘要 |
PROBLEM TO BE SOLVED: To overcome a problem of handling a thin layer substrate until mounting of thin layer elements by continuously carrying out processes from making thinner a semiconductor element substrate with a large diameter to back metal plating of the backside for reinforcing the thin layer substrate. SOLUTION: While a semiconductor element substrate is integrally bonded on a dummy substrate by using a heat foaming adhesive sheet, processes from uniformly making the whole substrate thin to back metal plating can be carried out continuously. Furthermore, the thin layer substrate and the dummy substrate can be readily separated and the thin layer substrate is reinforced with the back metal after separation. Accordingly, cracks during processes such as dicing and the like can be prevented, and thus a problem of handling until mounting of the thin layer elements can be overcome. |
