METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a satisfactorily qualified polysilicon film on a substrate in the process for manufacturing semiconductor by continuously generating uniform plasma under the pressure in the vicinity of atmospheric pressure and processing the substrate by the plasma. SOLUTION: The method and the apparatus for forming polysilicon film on the semiconductor element with plasma CVD method comprises the steps of placing a solid-dielectric body on at least one opposed surface of opposing pair of electrodes; contacting plasma obtained by introducing processing gas between the opposing pair of electrodes and applying pulsing electrical field with the substrate, and providing the atmosphere of the vicinity of the contacting zone between the plasma and the substrate either one kind or more selected from nitrogen, argon, helium, neon, or xenon groups.