摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric element, capable of effectively suppressing the diffusion of oxygen to an area positioned below a lower electrode at heat treatment for sintering an oxide-based dielectric film. SOLUTION: This dielectric element is provided with the lower electrode, provided with an IrSiN film 14 with a function for suppressing diffusion of oxygen, an SBT film 19 as the oxide-based dielectric film formed on the lower electrode and an SiN film 17 with the function of suppressing the diffusion of oxygen, arranged in regions other than the lower electrode. |