发明名称 DIELECTRIC ELEMENT AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a dielectric element, capable of effectively suppressing the diffusion of oxygen to an area positioned below a lower electrode at heat treatment for sintering an oxide-based dielectric film. SOLUTION: This dielectric element is provided with the lower electrode, provided with an IrSiN film 14 with a function for suppressing diffusion of oxygen, an SBT film 19 as the oxide-based dielectric film formed on the lower electrode and an SiN film 17 with the function of suppressing the diffusion of oxygen, arranged in regions other than the lower electrode.
申请公布号 JP2002151657(A) 申请公布日期 2002.05.24
申请号 JP20000340045 申请日期 2000.11.08
申请人 SANYO ELECTRIC CO LTD 发明人 MATSUSHITA SHIGEHARU;HONMA KAZUYA
分类号 H01L27/105;H01L21/02;H01L21/314;H01L21/316;H01L21/318;H01L21/8242;H01L21/8246;H01L27/108 主分类号 H01L27/105
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