PLASMA AUXILIARY PROCESSING CHAMBER OF SEMICONDUCTOR SUBSTRATE INCLUDING A PLURALITY OF GROUNDING PATH BRIDGE

摘要

PROBLEM TO BE SOLVED: To prevent electrical arc discharge in a plasma auxiliary processing chamber of a semiconductor substrate. SOLUTION: A plurality of conductive bridges are provided in the chamber to prevent the electrical arc discharge. The chamber has a plurality of conductive bridges connecting part of substrate-supporting member with part of the chamber wall. A mesh 310 is provided by a plurality of wire bridges 302 extending in a radial direction, and a plurality of concentric wire rod rings 301 connecting the bridges 302. The bridges formed by the metal mesh provide a grounding path from a backet 150 to a grounded chamber side wall 118 to eliminate formation of standing wave. In addition, gas flows through the mesh 310 which is not solid body.