发明名称 METHOD AND APPARATUS FOR DETECTING END POINT OF WET ETCHING AND WET ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To detect the end point of etching through a simple arrangement even if the reflectivity is substantially constant before and after etching and no bubble is generated during etching. SOLUTION: A substrate 30 where a hydrophilic film is applied onto a water repellent substance is rotated while spraying etching aqueous solution 35a thereto and then spraying and rotation are stopped. The substrate 30 is then irradiated with a light beam from a light source 41 and reflected light is detected by a photodetector 42. When the substrate is exposed by etching, the liquid is changed into particulate state by a 'coating' of etching aqueous solution and water repellency of the substrate and surface tension of the liquid and the reflected light is disturbed. A circuit 43 amplifies and differentiates an output from the photodetector 42 and then compares it with a reference voltage thus detecting the end point of etching. In response to the detection, etching liquid 35a is ejected from a nozzle 39 under a state where the nozzle 39 is moved to the substrate 30 side and the substrate 30 is rotated. Etching is stopped upon elapsing a set time after detecting the end point of etching.
申请公布号 JP2002151462(A) 申请公布日期 2002.05.24
申请号 JP20000341428 申请日期 2000.11.09
申请人 FUJITSU LTD 发明人 HOSHINO EIICHI
分类号 G03F7/40;C23F1/08;H01L21/306;(IPC1-7):H01L21/306 主分类号 G03F7/40
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