| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor device which improves productivity, compared with in the prior art, without needing a substrate polishing process by the CMP method. SOLUTION: The manufacturing method comprises a step for forming a Cu film 3 on a base layer 2, forming a photo resist layer 4 on the Cu film 3, forming the photo resist layer 4 into a specified mask pattern, radiating an ion beam 5 to implant ions in corresponding portions of the Cu film 3 to openings of the photo resist layer 4, oxidating to form copper oxide 3a, etching to remove portions of copper oxide 3a, ashing to remove the resist layer 4 on the Cu film 3 and wet cleaning.
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