| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which is high in luminous intensity and easily manufactured and to provide a method of manufacturing the same. SOLUTION: A current block layer 3 of the LED is formed on an N-type GaAs substrate 2. A light emitting part 10 composed of an N-type AlGaInP clad layer 4, an AlGaInP active layer 5, and a P-type AlGaInP clad layer 6 is formed thereon, and a P-type AlGaInP current dispersion layer 7 is grown thereon. A surface electrode 9 is formed thereon, and a back electrode 1 is formed on the rear of the N-type GaAs substrate 2. |
