| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for forming an under bump metal or bump on a metal electrode with high uniformity, adhesion and reliability, and to obtain a highly reliable semiconductor device by that method. SOLUTION: At the time of pretreatment preceding to nickel plating on a metal electrode, a chip or wafer fixed with an electrode is cleaned at least once with an organic solvent and then cleaned with UV ozone thus suppressing difference of processing in one electrode, between respective electrodes on one chip, and between electrodes on a wafer and between wafers. Furthermore, a centrally recessed UBM can be formed by increasing the concentration of nickel plating liquid. Consequently, a UBM or a bump having excellent uniformity, adhesion and reliability can be formed. Furthermore, a highly reliable semiconductor device can be obtained by that method.</p> |
