| 发明名称 |
THIN-FILM TRANSISTOR AND LIQUID-CRYSTALLINE DISPLAY DEVICE |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the characteristics of a polycrystalline silicon thin-film transistor. SOLUTION: The internal stress of a gate insulating film is set at -100 to 500 Mpa. Thus, the interface defect with a polycrystalline silicon, which is a semiconductor layer, is reduced, and a thin-film transistor with improved on-characteristics is provided.</p> |
| 申请公布号 |
JP2002151701(A) |
申请公布日期 |
2002.05.24 |
| 申请号 |
JP20000348215 |
申请日期 |
2000.11.15 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SANO HIROSHI;SAKAI MASAHIRO;KOBAYASHI IKUNORI;TAMURA TATSUHIKO |
| 分类号 |
G02F1/136;G02F1/1368;H01L21/316;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
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