发明名称 |
MULTIPLE FREQUENCY PLASMA CHAMBER WITH GROUNDING CAPACITOR AT CATHODE |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. SOLUTION: At least one of capacitors 50-54 is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF output to any plasma outside the region directly between the two electrodes 12 and 20. Consequently, the chamber can improve plasma processing performance by concentrating more of the RF output in the region between the two electrodes. |
申请公布号 |
JP2002151496(A) |
申请公布日期 |
2002.05.24 |
申请号 |
JP20010136357 |
申请日期 |
2001.05.07 |
申请人 |
APPLIED MATERIALS INC |
发明人 |
SHEN SAN;JEFF C OLSEN;YADAV SANJAY;SHANG QUANYUAN;LAW KAM S |
分类号 |
H05H1/46;B01J19/08;C23C16/34;C23C16/509;C23C16/52;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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