SILICON NITRIDE ANTI-REFLECTIVE COATING FOR 193 NM LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an integrated circuit using a silicon nitride anti-reflective coating(ARC). SOLUTION: A silicon-contained compound is reacted with a nitride-contained compound to form a silicon nitride layer 204. The silicon nitride layer is suitable for an integrated circuit manufacturing process. In the integrated circuit manufacturing process, the silicon nitride ARC 204 is used as a hard mask. In another integrated circuit manufacturing process, the silicon nitride ARC is built in a damascene structure.