SEMICONDUCTOR MEMORY AND METHOD FOR DISCRIMINATING CHANGE OF THRESHOLD VALUE OF MEMORY CELL TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory in which data can appropriately be rewritten in a short time and reliability can be improved. SOLUTION: A cell array for evaluating read-disturb and a switch 4 are provided so that an output of a data control line driver 2 is shared with a memory cell array 1. At the time of read-out, the voltage equal to the control gate voltage of the memory cell array 1 is applied as the control gate voltage of the cell array for evaluating read-disturb, and read-disturb stress is given. Then a block in which data destruction is being caused is previously detected by the cell array for evaluating read-disturb and the switch 4 for data destruction by read-out, and its block position information is imported.