| 摘要 |
PROBLEM TO BE SOLVED: To interrupt a through current in a shorter time than the case in a conventional semiconductor device in the case where a potential higher than a power potential on the side of a high potential in a semiconductor device is applied to elements in this semiconductor device comprising an interface circuit for conducting the input/output of a signal between the inerface circuit and other circuit. SOLUTION: A semiconductor device is provided with a transistor QP1 having first and second diffusion regions provided in an N-type well formed on a semiconductor substrate or in a semiconductor substrate, a first terminal which is connected with the first diffusion region and is fed a power potential from the outside, a second terminal p which is connected with the second diffusion region and is used for conducting the input/output of a signal between the terminal p and other circuit, floating means QP3 and QP4 for floating the substrate or the well according to a potential in a signal, which is applied to the second terminal, and a diode D for charging the substrate or the well according to the potential in the signal which is applied to the second terminal.
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