| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor capacitor device, which can more suppress the dependence of the capacity value of the device on a voltage than conventional MIM capacitors. SOLUTION: This semiconductor capacitor device is constituted in a structure that the first capacitor insulating film 6 of the C1 of one pair of MIM capacitors C1 and C2 formed on a semiconductor substrate 1 is used as an SiO2 film, the second capacitor insulating film 8 of the C2 is used as an SiN film and moreover, electrodes 5, 7 and 9 are connected with each other in reverse parallel (The upper electrodes 9 and 7 and the lower electrodes 7 and 5 are parallel- connected with each other in their sleeves.), whereby the dependence of the capacity value of the device on a voltage can be lessened so as to cancel the dependences of the capacity values of both of the capacitors C1 and C2 on a voltage.
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