发明名称 SEMICONDUCTOR MANUFACTURING DEVICE
摘要 PROBLEM TO BE SOLVED: To sufficiently discharge residuals and to reduce the influence. SOLUTION: A discharge line 28 connected to a discharge device 29 is connected to a discharge port 27 communicated to a processing chamber 12 and opened at the lower part of a process tube 11, a process gas introduction line 31 connected to an external combustion device 32 is connected to the lower end of a process gas introduction pipe 30 laid on the outer side of the process tube 11, and a bypass line 39 connected to the discharge line 28 is connected to the process gas introduction line 31. A purge gas introduction pipe 41 is laid on the opposite side of the process gas introduction pipe 30 and a purge gas introduction line 42 is connected to the lower end of the purge gas introduction pipe 41. Thus, at the time of a purge step, by performing discharge by the discharge line while introducing purge gas from the purge gas introduction line to the processing chamber and performing the discharge from the bypass line while introducing the purge gas also from the process gas introduction line, the residuals are surely discharged.
申请公布号 JP2002151499(A) 申请公布日期 2002.05.24
申请号 JP20000346140 申请日期 2000.11.14
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 IZUMI MANABU;TAKASHIMA YOSHIKAZU
分类号 C23C16/44;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/44
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