| 摘要 |
PROBLEM TO BE SOLVED: To obtain a stable semiconductor laser device having improved characteristics. SOLUTION: In the semiconductor laser device, a clad layer 45 made of a p-type gallium alumina arsenic (Ga-Al-As) based compound, an etching stop layer(ESL) 46 that has an Al composition ratio of 0.4 or less and is made of a p-type gallium alumina arsenic (Ga-Al-As) based compound, a pile-up p layer 47 made of a p-type gallium alumina arsenic (Ga-Al-As) based compound while the absorption of laser being oscillated in the active layer is smaller than the ESL, and a block layer 48 made of an n-type gallium alumina arsenic (Ga-Al-As) based compound where the refractive index of the laser is smaller than the ESL are laminated in this order. The block layer is subjected to wet etching selectively in a stripe shape, and a clad layer 49 made of a p-type gallium alumina arsenic (Ga-Al-As) based compound is formed at a part 48a that has been subjected to wet etching in the stripe shape.
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