INSULATION FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for obtaining at a low temperature a high reliability silicon oxide film durable for use as a gate insulation film. SOLUTION: For forming a silicon oxide film covering island non-single- crystal silicon regions by the plasma CVD using a raw material of an organic silane having ethoxy group (e.g. TEOS) with oxygen; hydrogen chloride, chlorine- containing hydrocarbon (e.g. trichloroethylene) or fluorine-containing gas is mixed preferably 0.01-1 mol% of the atmosphere to lessen alkali elements in the obtained silicon oxide film, thereby raising the reliability. Before forming the silicon oxide film, the silicon regions are treated with a plasma of oxygen with hydrogen chloride or a chlorine-containing hydrocarbon.