发明名称 METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a surface acoustic wave element that can sufficiently suppress the occurrence of inter-electrode short- circuiting and inter-electrode discharge in the manufacturing process of the element so as to easily enhance the yield. SOLUTION: In the manufacturing method for the surface acoustic wave element including a process (P6) where a wafer with piezoelectricity is slit into chips, a process (P8) where each chip is fixed to a package, and a process (P9) for wire bonding, a conductive protection layer made of an electric conductive material covers an electrode forming face of the wafer in at least one of the processes and the conductive protection layer is removed before air-tight sealing.
申请公布号 JP2002151991(A) 申请公布日期 2002.05.24
申请号 JP20000346717 申请日期 2000.11.14
申请人 HITACHI LTD;HITACHI MEDIA ELECTORONICS CO LTD 发明人 MATSUZAKI EIJI;USHIFUSA NOBUYUKI;ITE TATEO;GOTO MASAAKI
分类号 H03H3/08;(IPC1-7):H03H3/08 主分类号 H03H3/08
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