SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device together with its manufacturing method wherein low power consumption is realized even with a large screen. SOLUTION: A signal wiring 162 or a part of gate wiring 162 is formed from a low-resistant material (typically aluminum), a pixel TFT 206 of a pixel 205 comprises a p-channel type TFT. The p-channel type TFT of the pixel has a multi-gate structure comprising a plurality of channel formation regions 166 and 167 for reducing variation in off current.