| 摘要 |
PROBLEM TO BE SOLVED: To provide a stopper film for protecting an interlayer dielectric consisting of SiO2, fluorine doped SiO2, and organic and inorganic SOG(Spin-on glass) member, etc., from damage by the CMP processing, and to provide a method of a chemical mechanical polishing of using the film in chemical mechanical polishing (hereafter, it is said 'CMP') of a wafer mounted with a wiring pattern in a manufacturing process of a semiconductor device. SOLUTION: A chemical mechanical polishing stopper film consists of organic polymer and the specific inductive capacity is four or less.
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