| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline semiconductor material which can improve a crystallization, and also, to provide a method for manufacturing a semiconductor device using the above method. SOLUTION: An amorphous film made of Si is formed on a substrate 11 via a protective film 12. Then an energy beam of a short wavelength irradiates the amorphous film for the first heating treatment to form a crystalline film 14 made of quasi-single crystal. Subsequently, an energy beam E2 of a short wavelength is made to irradiate the crystalline film 14 for the second heating treatment to selectively melt and re-crystallize only a grain boundary 14b of the film 14 and the vicinity thereof. As a result, a crystalline film 15 having an improved crystallization can be obtained.
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