SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device that has a low threshold current characteristic and at the same time has less loss. SOLUTION: The semiconductor device 100 comprises a compound semiconductor substrate 1, and a multilayer structure including at least an active layer 4 that is formed on the compound semiconductor substrate 1 and radiates a laser beam. A ridge-like ridge structure 20 is provided at the opposite site to the compound semiconductor substrate 1 while sandwiching the active layer 4 out of the multilayer structures included in the semiconductor layer device 100. The ridge structure 20 comprises a current rejection layer including an AlOx layer 13 and a current transmission layer including an AlyGa1-yAs layer 7 connected to the AlOx layer 13 of the current rejection layer. Then, the AlyGa1-yAs layer 7 is provided closer to the active layer 4 as compared with the AlOx layer 13.