| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming transistors having different characteristics inside the same LSI with an excellent yield. SOLUTION: The conductive films 15 and 16 of respectively different materials are buried through gate insulation films 10 and 11 in recessed parts formed between a plurality of trench insulation films 5 provided so as to be projected from the surface of a semiconductor substrate 1, they are patterned and a gate electrode 9a is formed.
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