| 摘要 |
PROBLEM TO BE SOLVED: To improve the crystallinity of an AlGaInP layer of a semiconductor device comprising a plurality of compound semiconductor layers including the AlGaInP layer and a hetero junction. SOLUTION: The semiconductor device comprises a laminate composed of an n+ type GaAs collector electrode lead out layer 102, an n-type GaAs collector layer 103, a p-type GaAs base layer 104, an n-type (AlxGa1-x)yIn1-yP (0.1<=x<=0.7, 0<=y<=1) emitter layer 105, and an n+ type GaAs emitter lead out layer 106 on a semi-insulative GaAs substrate 101. The laminate has first insulation regions 111 on one side and second insulation regions 112 on the other side.
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