| 摘要 |
PURPOSE: An MRAM(Magnetic Random Access Memory) device having a magnetic tunnel junction is provided to hardly suffer damage caused from mishandling circuit abnormalities, or damages from electrostatic discharge. CONSTITUTION: An SDT(Spin Dependent Tunneling) junction(30) includes a multi-layer stack of materials. The stack includes first and second seed layers(32,34). The first seed layer(32) allows the second layer(34) to be grown with a (111) crystal structure orientation. The second seed layer(34) establishes a (111) crystal structure orientation for a subsequent AF(Anti-Ferromagnetic) pinning layer(36). The AF pinning layer(36) provides a large exchange field, which holds the magnetization of a subsequent pinned FM(FerroMagnetic) layer(38) in one direction. On top of the pinned FM layer(38) is an insulating tunnel barrier(40) having partially processed base material. Optional interfacial layers(42,44) may sandwich the insulating tunnel barrier(40). The insulating tunnel barrier(40) is a sense FM layer(46) having a magnetization that is free to rotate in the presence of an applied magnetic field.
|
