| 摘要 |
<p>A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate (101) and an insulating layer (103) formed of an epitaxially grown oxide such as (A)y(TixM1-x)1-yO3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.</p> |
