Silicon carbide FET for high frequency and high performance use comprises a source electrode, a drain electrode and a gate electrode in a layer sequence of different poly-type silicon carbides on a substrate made from silicon carbide

摘要

Silicon carbide FET comprises a source electrode (5), a drain electrode (6) and a gate electrode (7) in a layer sequence of different poly-type silicon carbides on a substrate (2) made from silicon carbide. The substrate and a covering layer (4) arranged below the electrodes are made from hexagonal poly-type silicon carbide. A functional layer (3) made from cubic silicon carbide is arranged between the substrate and the covering layer. The layers are applied to one side of the substrate. An independent claim is also included for a process for the production of the silicon carbide FET. Preferred Features: The substrate is made from 6H silicon carbide, 4H silicon carbide or semi-insulating hexagonal silicon carbide. The covering layer is n-doped. The functional layer is n-doped up to a zone in the nanometer range as boundary layer to the covering layer.